10.17863/CAM.11304
Puchtler, Tim J
Wang, Tong
Ren, Christopher X
Tang, Fengzai
Oliver, Rachel
Taylor, Robert A
Zhu, Tongtong
0000-0002-9481-8203
Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires.
Apollo - University of Cambridge Repository (staging)
2016
InGaN
m-Plane
polarized
quantum dot
single photon
Apollo - University of Cambridge Repository (staging)
Apollo - University of Cambridge Repository (staging)
2017-11-10
2017-11-10
2016-12-14
Article
1530-6984
https://www.repository.cam.ac.uk/handle/1810/268510
1530-6992
Attribution 4.0 International
We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved microphotoluminescence (μPL), and photon autocorrelation experiments give a thorough evaluation of the QD structural and optical properties. The QD exhibits antibunched emission up to 100 K, with a measured autocorrelation function of g(2)(0) = 0.28(0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 ± 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 ± 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.
Engineering and Physical Sciences Research Council
EP/M011682/1
Engineering and Physical Sciences Research Council
EP/J003603/1